File:B-d-irphotobondwave.png

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Description
English: Infrared photograph of initiation and propagation of bonding wave in wafer bonding of silicon wafers (in style of \cite{TG1998}). (l) wafers are separated by an air layer and the bond process starts by pressure on top wafer. (m) bond wave moves to the etches. (r) a perfectly bonded wafer pair, not reflecting IR light.
Date 22:17, 29 March 2011 (UTC)
Source Q.-Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology (1998)
Author Fraunhofer ENAS, D. Neumann
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Fraunhofer ENAS
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current00:17, 30 March 2011Thumbnail for version as of 00:17, 30 March 20111,107 × 360 (222 KB)wikimediacommons>Enaswiki{{Information |Description = Infrared photograph of initiation and propagation of bonding wave in wafer bonding of silicon wafers (in style of \cite{TG1998}). (l) wafers are separated by an air layer and the bond process starts by pressure on top wafe

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